? 2009 ixys corporation, all rights reserved symbol test conditions maximum ratings v dss t j = 25 c to 175 c40v v dgr t j = 25 c to 175 c, r gs = 1m ? 40 v v gsm transient 20 v i d25 t c = 25 c (chip capability) 600 a i l(rms) external lead current limit 160 a i dm t c = 25 c, pulse width limited by t jm 1600 a i a t c = 25 c 200 a e as t c = 25 c3j p d t c = 25 c 1250 w t j -55 ... +175 c t jm 175 c t stg -55 ... +175 c t l 1.6mm (0.062 in.) from case for 10s 300 c t sold plastic body for 10s 260 c m d mounting torque (to-264) 1.13/10 nm/lb.in. f c mounting force (plus247) 20..120 /4.5..27 n/lb. weight to-264 10 g plus247 6 g symbol test conditions characteristic values (t j = 25 c unless otherwise specified) min. typ. max. bv dss v gs = 0v, i d = 250a 40 v v gs(th) v ds = v gs , i d = 250a 1.5 3.5 v i gss v gs = 20v, v ds = 0v 200 na i dss v ds = v dss , v gs = 0v 10 a t j = 150 c 1 ma r ds(on) v gs = 10v, i d = 100a, notes 1 & 2 1.5 m ? n-channel enhancement mode avalanche rated fast intrinsic diode ixtk600n04t2 IXTX600N04T2 v dss = 40v i d25 = 600a r ds(on) 1.5m ? ? ? ? ? ds100209(11/09) features z international standard packages z high current handling capability z fast intrinsic diode z avalanche rated z low r ds(on) advantages z easy to mount z space savings z high power density applications z dc-dc converters and off-line ups z primary-side switch z high speed power switching applications trencht2 tm gigamos tm power mosfet advance technical information g = gate d = drain s = source tab = drain plus247 (ixtx) to-264 (ixtk) s g d tab tab g s d
ixys reserves the right to change limits, test conditions, and dimensions. ixtk600n04t2 IXTX600N04T2 ixys mosfets and igbts are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 7,005,734 b2 7,157,338b2 by one or more of the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405 b2 6,759,692 7,063,975 b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2 7,071,537 advance technical information the product presented herein is under development. the technical specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. ixys reserves the right to change limits, test conditions, and dimensions without notice. symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs v ds = 10v, i d = 60a, note 1 90 150 s c iss 40 nf c oss v gs = 0v, v ds = 25v, f = 1mhz 6400 pf c rss 1470 pf r gi gate input resistance 1.32 ? t d(on) 40 ns t r 20 ns t d(off) 90 ns t f 250 ns q g(on) 590 nc q gs v gs = 10v, v ds = 0.5 ? v dss , i d = 0.5 ? i dss 127 nc q gd 163 nc r thjc 0.12 c/w r thcs 0.15 c/w source-drain diode symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. i s v gs = 0v 600 a i sm repetitive, pulse width limited by t jm 1800 a v sd i f = 100a, v gs = 0v, note 1 1.2 v t rr 100 ns i rm 3.3 a q rm 165 nc resistive switching times v gs = 10v, v ds = 0.5 ? v dss , i d = 200a r g = 1 ? (external) i f = 150a, v gs = 0v -di/dt = 100a/ s v r = 20v notes 1. pulse test, t 300 s, duty cycle, d 2%. 2. includes lead resistance. to-264 (ixtk) outline millimeter inches min. max. min. max. a 4.82 5.13 .190 .202 a1 2.54 2.89 .100 .114 a2 2.00 2.10 .079 .083 b 1.12 1.42 .044 .056 b1 2.39 2.69 .094 .106 b2 2.90 3.09 .114 .122 c 0.53 0.83 .021 .033 d 25.91 26.16 1.020 1.030 e 19.81 19.96 .780 .786 e 5.46 bsc .215 bsc j 0.00 0.25 .000 .010 k 0.00 0.25 .000 .010 l 20.32 20.83 .800 .820 l1 2.29 2.59 .090 .102 p 3.17 3.66 .125 .144 q 6.07 6.27 .239 .247 q1 8.38 8.69 .330 .342 r 3.81 4.32 .150 .170 r1 1.78 2.29 .070 .090 s 6.04 6.30 .238 .248 t 1.57 1.83 .062 .072 dim. terminals: 1 - gate 2 - drain (collector) 3 - source (emitter) 4 - drain (collector) plus 247 tm (ixtx) outline dim. millimeter inches min. max. min. max. a 4.83 5.21 .190 .205 a 1 2.29 2.54 .090 .100 a 2 1.91 2.16 .075 .085 b 1.14 1.40 .045 .055 b 1 1.91 2.13 .075 .084 b 2 2.92 3.12 .115 .123 c 0.61 0.80 .024 .031 d 20.80 21.34 .819 .840 e 15.75 16.13 .620 .635 e 5.45 bsc .215 bsc l 19.81 20.32 .780 .800 l1 3.81 4.32 .150 .170 q 5.59 6.20 .220 0.244 r 4.32 4.83 .170 .190
? 2009 ixys corporation, all rights reserved ixtk600n04t2 IXTX600N04T2 fig. 1. output characteristics @ t j = 25oc 0 50 100 150 200 250 300 350 0.0 0.1 0.2 0.3 0.4 0.5 v ds - volts i d - amperes v gs = 15v 10v 7v 4v 4.5v 5v 6v fig. 3. output characteristics @ t j = 150oc 0 50 100 150 200 250 300 350 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 v ds - volts i d - amperes v gs = 15v 10v 7v 5 v 6 v 3 v 4v fig. 4. normalized r ds(on) vs. junction temperature 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 -50 -25 0 25 50 75 100 125 150 175 t j - degrees centigrade r ds(on) - normalized v gs = 10v i d < 600a fig. 5. normalized r ds(on) vs. drain current 0.8 1.0 1.2 1.4 1.6 1.8 2.0 0 50 100 150 200 250 300 350 i d - amperes r ds(on) - normalized v gs = 10v 15v t j = 175oc t j = 25oc fig. 6. drain current vs. case temperature 0 20 40 60 80 100 120 140 160 180 -50 -25 0 25 50 75 100 125 150 175 t c - degrees centigrade i d - amperes external lead current limit fig. 2. extended output characteristics @ t j = 25oc 0 50 100 150 200 250 300 350 400 0.00.51.01.52.02.53.0 v ds - volts i d - amperes v gs = 15v 5v 4v 4.5v 10v 7v 6v
ixys reserves the right to change limits, test conditions, and dimensions. ixtk600n04t2 IXTX600N04T2 fig. 7. input admittance 0 20 40 60 80 100 120 140 160 180 200 2.0 2.5 3.0 3.5 4.0 4.5 5.0 v gs - volts i d - amperes t j = 150oc 25oc - 40oc fig. 8. transconductance 0 40 80 120 160 200 240 0 20 40 60 80 100 120 140 160 180 200 i d - amperes g f s - siemens t j = - 40oc 150oc 25oc fig. 9. forward voltage drop of intrinsic diode 0 50 100 150 200 250 300 350 0.20.30.40.50.60.70.80.91.01.1 v sd - volts i s - amperes t j = 150oc t j = 25oc fig. 10. gate charge 0 1 2 3 4 5 6 7 8 9 10 0 100 200 300 400 500 600 q g - nanocoulombs v gs - volts v ds = 20v i d = 300a i g = 10ma fig. 11. capacitance 0.1 1.0 10.0 100.0 0 5 10 15 20 25 30 35 40 v ds - volts capacitance - nanofarads f = 1 mhz c iss c rss c oss fig. 12. forward-bias safe operating area 1 10 100 1,000 10,000 0110100 v ds - volts i d - amperes 100s 1ms 10ms r ds(on) limit t j = 175oc t c = 25oc single pulse 100ms external lead limit dc 25s
? 2009 ixys corporation, all rights reserved ixtk600n04t2 IXTX600N04T2 fig. 14. resistive turn-on rise time vs. drain current 0 10 20 30 40 50 60 70 80 90 100 40 60 80 100 120 140 160 180 200 i d - amperes t r - nanoseconds t j = 25oc t j = 125oc r g = 1 ? , v gs = 10v v ds = 20v fig. 15. resistive turn-on switching times vs. gate resistance 0 100 200 300 400 500 600 12345678910 r g - ohms t r - nanoseconds 20 40 60 80 100 120 140 t d ( on ) - nanoseconds t r t d(on) - - - - t j = 125oc, v gs = 10v v ds = 20v i d = 100a i d = 200a fig. 16. resistive turn-off switching times vs. junction temperature 0 50 100 150 200 250 300 350 400 25 35 45 55 65 75 85 95 105 115 125 t j - degrees centigrade t f - nanoseconds 80 90 100 110 120 130 140 150 160 t d ( off ) - nanoseconds t f t d(off) - - - - r g = 1 ? , v gs = 10v v ds = 20v i d = 200a i d = 100a fig. 17. resistive turn-off switching times vs. drain current 0 50 100 150 200 250 300 350 400 40 60 80 100 120 140 160 180 200 i d - amperes t f - nanoseconds 40 60 80 100 120 140 160 180 200 t d ( off ) - nanoseconds t f t d(off) - - - - r g = 1 ? , v gs = 10v v ds = 20v t j = 125oc, 25oc fig. 13. resistive turn-on rise time vs. junction temperature 0 10 20 30 40 50 60 70 80 90 25 35 45 55 65 75 85 95 105 115 125 t j - degrees centigrade t r - nanoseconds r g = 1 ? , v gs = 10v v ds = 20v i d = 200a i d = 100a fig. 18. resistive turn-off switching times vs. gate resistance 0 100 200 300 400 500 600 700 800 12345678910 r g - ohms t f - nanoseconds 0 100 200 300 400 500 600 700 800 t d ( off ) - nanoseconds t f t d(off) - - - - t j = 125oc, v gs = 10v v ds = 20v i d = 200a, 100a
ixys reserves the right to change limits, test conditions, and dimensions. ixtk600n04t2 IXTX600N04T2 ixys ref:t_600n04t2(v9)11-05-09 fig. 19. maximum transient thermal impedance 0.001 0.010 0.100 1.000 0.00001 0.0001 0.001 0.01 0.1 1 10 pulse width - seconds z (th)jc - oc / w fig. 19. maximum transient thermal impedance .sadgsfgsf 0.300
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